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this is information on a product in full production. october 2014 docid027084 rev 1 1/13 STF16N65M2 n-channel 650 v, 0.32 ? typ., 11 a mdmesh m2 power mosfet in a to-220fp package datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener-protected applications ? switching applications description this device is an n-channel power mosfet developed using mdmesh? m2 technology. thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. am15572v1 , tab 72)3 order code v ds @ t jmax r ds(on) max i d STF16N65M2 710 v 0.36 ? 11 a table 1. device summary order codes marking package packaging STF16N65M2 16n65m2 to-220fp tube www.st.com
contents STF16N65M2 2/13 docid027084 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid027084 rev 1 3/13 STF16N65M2 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d (1) 1. limited only by maximum temperature allowed. drain current (continuous) at t c = 25 c 11 a i d drain current (continuous) at t c = 100 c 6.9 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 44 a p tot total dissipation at t c = 25 c 25 w dv/dt (3) 3. i sd 11 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v. peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 520 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;tc=25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 5 c/w r thj-amb thermal resistance junction-ambient max 62.50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 1.9 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 360 mj
electrical characteristics STF16N65M2 4/13 docid027084 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0, v ds = 650 v 1 a v gs = 0, v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.5 a 0.32 0.36 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 100 v, f = 1 mhz - 718 - pf c oss output capacitance - 32 - pf c rss reverse transfer capacitance -1.1-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 520 v - 189 - pf r g intrinsic gate resistance f = 1 mhz open drain - 5.2 - ? q g total gate charge v dd = 520 v, i d = 11 a, v gs = 10 v (see figure 15 ) -19.5-nc q gs gate-source charge - 4 - nc q gd gate-drain charge - 8.3 - nc
docid027084 rev 1 5/13 STF16N65M2 electrical characteristics 13 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 5.5 a, r g = 4.7 ? , v gs = 10 v (see figure 14 and 19 ) - 11.3 - ns t r rise time - 8.2 - ns t d(off) turn-off delay time - 36 - ns t f fall time - 11.3 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 11 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 44 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage v gs = 0, i sd = 11 a - 1.6 v t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s v dd = 60 v (see figure 16 ) -342 ns q rr reverse recovery charge - 3.5 c i rrm reverse recovery current - 20.4 a t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s v dd = 60 v, t j =150 c (see figure 16 ) -458 ns q rr reverse recovery charge - 4.6 c i rrm reverse recovery current - 20.5 a
electrical characteristics STF16N65M2 6/13 docid027084 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv pv 7m ?& 7f ?& 6lqjohsxovh ?v *,3')65 figure 4. output characteristics figure 5. transfer characteristics , ' 9 '6 9 $ 9 *6 9 9 9 9 *,3')65 , ' 9 *6 9 $ 9 '6 9 *,3')65 figure 6. normalized gate threshold voltage vs. temperature figure 7. normalized v (br)dss vs. temperature v gs(th) 0.8 -75 -25 25 t j (c) (norm) 0.6 75 0.7 0.9 1.0 125 1.1 i d = 250 a gipd180920141442fsr v (br)dss 0.96 -75 -25 75 t j (c) 25 (norm) 0.88 125 0.92 1.00 1.04 1.08 i d = 1ma gipd180920141448fsr
docid027084 rev 1 7/13 STF16N65M2 electrical characteristics 13 figure 8. static drain-source on-resistance figure 9. normalized on-resistance vs. temperature 5 '6rq , ' $ 9 *6 9 *,3')65 r ds(on) 1 -75 -25 75 t j (c) 25 (norm) 0.2 125 0.6 1.4 1.8 2.2 v gs = 10v gipd180920141459fsr figure 10. gate charge vs. gate-source voltage figure 11. capacitance variations 9 *6 4 j q& 9 9 '6 9 9 '' 9 , ' $ 9 '6 *,3')65 & 9 '6 9 s) &lvv &rvv &uvv *,3')65 figure 12. output capacitance stored energy figure 13. source-drain diode forward characteristics ( 9 '6 9 ?- *,3')65 9 6' , 6' $ 9 7 m ?& 7 m ?& 7 m ?& *,3')65
test circuits STF16N65M2 8/13 docid027084 rev 1 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid027084 rev 1 9/13 STF16N65M2 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STF16N65M2 10/13 docid027084 rev 1 figure 20. to-220fp drawing 7012510_rev_k_b
docid027084 rev 1 11/13 STF16N65M2 package mechanical data 13 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 ?3 3.2
revision history STF16N65M2 12/13 docid027084 rev 1 5 revision history table 10. document revision history date revision changes 24-oct-2014 1 first release.
docid027084 rev 1 13/13 STF16N65M2 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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